3VD235600YL 3VD235600YL high voltage mosfet chips description ? 3VD235600YL is a high voltage n-channel enhancement mode power mos-fet chip fabricated in advanced silicon epitaxial planar technology. ? advanced termination scheme to provide enhanced voltage-blocking capability. ? avalanche energy specified ? source-to-drain diode recovery time comparable to a discrete fast recovery diode ? the chips may packaged in to-251 type and the typical equivalent product is 2n60. ? the packaged product is widely used in ac-dc power suppliers, dc-dc converters and h-bridge pwm motor drivers. ? die size: 2.72mm*2.06mm. ? chip thickness: 30020 m. ? top metal: al, ba ckside metal: ag. chip topography absolute maximum ratings (t amb =25 c) parameter symbol ratings unit drain-source voltage v ds 600 v gate-source voltage v gs 30 v drain current i d 2.0 a power dissipation (to-251 package) p d 44 w operation junction temperature t j -55 +150 c storage temperature tstg -55 +150 c electrical characteristics (t amb =25 c) parameter symbol test conditions min. typ. max. unit drain -source breakdown voltage b vdss v gs =0v, i d =250a 600 - - v gate threshold voltage v th v gs = v ds , i d =250a 2.0 - 4.0 v drain-source leakage current i dss v ds =600v, v gs =0v - - 1.0 a static drain- source on state resistance r ds(on) v gs =10v, i d =1.0a - - 4.6 gate-source leakage current i gss v gs =30v, v ds =0v - - 100 na source-drain diode forward on voltage v fsd i s =2.0a, v gs =0v - - 1.4 v hangzhou silan microelectronics co.,ltd rev:1.0 2008.10.15 http: www.silan.com.cn page 1 of 1
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